Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance fabricated phosphorus (P)-doped n-type body. N2 used for N-doping safer than PH3 P-doping; moreover, doping concentration highly controllable. Because MOSFET, which classical electronic device, driven by gate voltage, smooth functioning possible even at deep donor level. observed characteristics classic operating via an N-doped are crucial development power devices. In paper, we discuss significance and electrical